Infineon IPT015N10N5ATMA1: High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, Infineon Technologies introduces the IPT015N10N5ATMA1, a standout member of its advanced OptiMOS™ 5 family. This 100 V N-channel power MOSFET is engineered to set a new benchmark for performance in a wide array of power conversion applications, from server and telecom supplies to industrial motor drives and solar inverters.

At the heart of this MOSFET's superiority is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 1.5 mΩ at 10 V, the device minimizes conduction losses, allowing for more power to be delivered to the load with less energy wasted as heat. Simultaneously, its optimized gate charge ensures ultra-low switching losses, which is critical for high-frequency operation. This combination enables designers to push switching frequencies higher, which in turn allows for the use of smaller passive components like inductors and capacitors, significantly increasing overall power density.

The benefits extend beyond raw performance numbers. The IPT015N10N5ATMA1 is housed in a TOLL (TO-Leadless) package, which offers a footprint that is only 30% of a standard D2PAK 7-pin package. This compact form factor is crucial for space-constrained applications. Furthermore, the package features an exposed top side for superior dual-side cooling, dramatically improving thermal management and enabling higher power throughput and increased reliability under strenuous operating conditions.

Designers will also appreciate the device's high robustness and ease of use. It offers an extended avalanche ruggedness and a very wide safe operating area (SOA), providing a greater margin of safety in demanding environments. The PQ-level qualified part ensures high quality and reliability for professional industrial and automotive applications, giving engineers confidence in their end products.

In summary, the Infineon IPT015N10N5ATMA1 is not just a component but a key enabler for the next generation of efficient and compact power systems.

ICGOOODFIND: The Infineon IPT015N10N5ATMA1 OptiMOS™ 5 MOSFET is a pinnacle of power semiconductor design, masterfully balancing ultra-low conduction and switching losses within an innovative TOLL package that excels thermal performance. It is an ideal solution for designers aiming to maximize efficiency and power density in high-performance applications.

Keywords: OptiMOS™ 5, Power Density, Low RDS(on), TOLL Package, Switching Losses