Infineon IPA65R400CE: A 650V CoolMOS™ CE Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives continuous innovation in power semiconductor technology. At the forefront of this evolution is the Infineon IPA65R400CE, a 650V superjunction MOSFET from the renowned CoolMOS™ CE series. This power transistor is engineered to set new benchmarks in performance for a wide array of high-efficiency applications, including switched-mode power supplies (SMPS), server and telecom power systems, industrial motor drives, and photovoltaic inverters.

A key differentiator of the IPA65R400CE is its exceptionally low figure-of-merit (R DS(on) x E oss), which is a critical indicator of overall switching performance. With a maximum on-state resistance of just 400mΩ, it minimizes conduction losses. More importantly, its significantly reduced effective output capacitance (E oss) leads to markedly lower switching losses, especially at high frequencies. This allows designers to push switching frequencies higher without a punitive efficiency penalty, enabling the use of smaller passive components like magnetics and capacitors to achieve greater power density.

The device is built upon Infineon’s advanced superjunction (SJ) technology, which is the foundation of the CoolMOS™ family. This technology provides an optimal balance between low specific on-resistance and fast switching capability. The IPA65R400CE also incorporates features that enhance system robustness and reliability. It offers excellent electromagnetic compatibility (EMC) characteristics, simplifying filtering requirements and easing compliance with stringent regulatory standards. Furthermore, it boasts a high intrinsic body diode ruggedness and avalanche capability, ensuring stable operation under harsh conditions and voltage spikes.

Another significant advantage is its improved light-load efficiency, a crucial factor for applications that must meet modern energy efficiency regulations (like ErP and 80 PLUS) across a wide load range. The optimized gate charge (Q G) of the CoolMOS™ CE technology ensures smooth switching and easy driveability, making it compatible with a broad spectrum of controllers.

In summary, the Infineon IPA65R400CE is not merely a component but a pivotal enabler for next-generation power conversion systems. It delivers a powerful combination of low losses, high switching speed, and robust performance, directly contributing to smaller, cooler, and more energy-efficient end products.

ICGOOODFIND: The Infineon IPA65R400CE stands out as a superior 650V power MOSFET, leveraging advanced CoolMOS™ CE technology to deliver an exceptional blend of minimized switching and conduction losses, enhanced power density, and superior light-load efficiency. Its robust design and excellent EMC performance make it an ideal solution for high-performance, high-reliability applications across industrial, computing, and renewable energy sectors.

Keywords:

1. High-Efficiency

2. CoolMOS™ CE

3. Low Switching Losses

4. Power Density

5. 650V MOSFET