Infineon IPD60R280P7S: A 600V CoolMOS™ P7 Power Transistor for High-Efficiency Applications

In the rapidly advancing field of power electronics, achieving higher efficiency and power density is a constant pursuit. The Infineon IPD60R280P7S, a 600V superjunction MOSFET from the revolutionary CoolMOS™ P7 series, stands out as a pivotal component engineered to meet these demanding requirements. Designed for a diverse array of high-performance applications, this transistor sets a new benchmark in switching performance and thermal efficiency.

At the core of the IPD60R280P7S is Infineon's advanced superjunction (SJ) technology. This technology is the key to its exceptional performance, enabling an ultra-low specific on-resistance (R DS(on)) of just 280 mΩ at a 10V gate drive. This remarkably low resistance directly translates to minimized conduction losses, allowing for more efficient power conversion and reduced heat generation. The device is housed in a TO-252 (DPAK) package, offering an excellent balance between compact size and effective thermal management, which is crucial for space-constrained designs.

A defining characteristic of the CoolMOS™ P7 series is its superior switching behavior. The IPD60R280P7S exhibits exceptionally low gate charge (Q G) and significantly reduced reverse recovery charge (Q rr). These parameters are critical for high-frequency operation, as they lead to lower switching losses and enable designers to increase the switching frequency of their systems. Operating at higher frequencies allows for the use of smaller passive components like inductors and capacitors, thereby increasing the overall power density of the end application.

The benefits of this MOSFET are most evident in its target applications. It is an ideal choice for:

Switched-Mode Power Supplies (SMPS): Including server, telecom, and industrial power supplies where efficiency standards like 80 Plus Titanium are mandatory.

Power Factor Correction (PFC) Stages: Its fast switching speed and robust performance make it perfect for both interleaved and totem-pole PFC topologies.

Lighting: High-efficiency drivers for LED lighting systems.

Motor Control and Solar Inverters: Where reliability and low losses are paramount.

Furthermore, the device incorporates enhanced ruggedness and reliability, featuring a high avalanche ruggedness and an integrated source-drain diode with excellent reverse recovery characteristics. This ensures robust operation in harsh environments and protects against voltage spikes and other transient events.

ICGOOODFIND: The Infineon IPD60R280P7S is a top-tier 600V power MOSFET that encapsulates the best of modern semiconductor technology. Its blend of an ultra-low R DS(on), minimal switching losses, and high ruggedness makes it an indispensable component for designers striving to push the boundaries of efficiency and power density in next-generation power electronics.

Keywords: CoolMOS™ P7, High-Efficiency, Ultra-Low R DS(on), Fast Switching, Power Density.