Infineon BSZ099N06LS5ATMA1 OptiMOS 5 Power MOSFET: Datasheet, Specifications, and Application Notes
The relentless pursuit of higher efficiency and power density in modern electronics has made the choice of switching components paramount. The Infineon BSZ099N06LS5ATMA1 stands out as a premier solution in this arena, representing the cutting-edge OptiMOS™ 5 60 V technology tailored for a wide array of demanding applications. This Power MOSFET is engineered to deliver exceptional performance, combining low losses with robust reliability.
Key Datasheet and Specifications
A deep dive into the datasheet reveals the specifications that make this component a top choice for power designers. Housed in a superior PG-TSDSON-8 (8x8mm) package with an exposed top for excellent thermal performance, its key electrical characteristics include:
Drain-Source Voltage (VDS): 60 V
Continuous Drain Current (ID): Up to 100 A at a case temperature of 25°C, showcasing its high-current handling capability.
Ultra-Low On-Resistance (RDS(on)): A remarkably low 0.99 mΩ (max) at 10 V VGS. This is a cornerstone of its efficiency, directly minimizing conduction losses.
Low Gate Charge (QG): Typical total gate charge of 75 nC. This low charge enables fast switching speeds, reduces driving losses, and simplifies gate driver design.
Optimized Figure-of-Merit (FOM): The product of RDS(on) and QG is exceptionally low, indicating an ideal balance between conduction and switching losses.
These specifications collectively ensure that the BSZ099N06LS5ATMA1 operates with minimal power dissipation, leading to cooler running systems and reduced need for large heat sinks.
Primary Application Notes
The combination of high current capability, low RDS(on), and a thermally enhanced package makes this MOSFET exceptionally versatile. Its primary applications include:
Synchronous Rectification in Switch-Mode Power Supplies (SMPS): It is ideal for use in the secondary side of high-current DC-DC converters, including server and telecom power supplies, where its low on-resistance directly boosts efficiency.
Motor Control and Drives: Suitable for driving high-current motors in industrial automation, robotics, and automotive systems (e.g., electric power steering, brake systems). Its robustness ensures stable and reliable operation under high-load conditions.
Battery Management Systems (BMS): Used in protection circuits and for load switching. Its low losses are critical for maximizing battery run-time in portable devices and electric vehicles.
High-Current DC-DC Conversion: A perfect fit for buck and boost converters in point-of-load (POL) applications, particularly where board space is limited and thermal management is a challenge.
When designing with this MOSFET, careful attention must be paid to:
Gate Driving: Ensure a driver IC can supply sufficient peak current to quickly charge and discharge the low gate capacitance.
PCB Layout: A proper layout is critical to minimize parasitic inductance in high-switching-speed loops. Use a large ground plane and keep power traces short and wide.
Thermal Management: Although the package has excellent thermal characteristics, connecting it to a sufficient copper area on the PCB is necessary to sink heat effectively and maximize performance.
ICGOOODFIND
The Infineon BSZ099N06LS5ATMA1 OptiMOS 5 MOSFET is a high-efficiency powerhouse defined by its ultra-low 0.99 mΩ on-resistance and superior thermal performance in a compact package. It is an optimal choice for designers aiming to push the boundaries of efficiency and power density in high-current applications like power supplies, motor drives, and battery management systems.
Keywords:
1. OptiMOS 5
2. Low On-Resistance
3. Power Efficiency
4. Synchronous Rectification
5. Thermal Performance
